STP140N10F4 Overview
This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and mutation mode. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
STP140N10F4 Key Features
- VDSS 100 V 100 V 100 V