STMicroelectronics STP140N4F6
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STP140N4F6 |
|---|---|
| Datasheet | STP140N4F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Obsolete Product(s) - Obsolete Product(s) Figure 1: Internal schematic diagram Order code STP140N4F6 VDS 40 V RDS(on) max. 4.3 mΩ ID 80 A PTOT 168 W● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applications● Power tools
DESCRIPTION
Order code STP140N4F6 Table 1: Device summary Marking Package 140N4F6 TO-220 Packing Tube August 2015 DocID028239 Rev 1 This is information on a product in full production. 1/13 Contents Contents STP140N4F6 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .......................................................................
