Download STP15N60M2-EP Datasheet PDF
STP15N60M2-EP page 2
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STP15N60M2-EP Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high.

STP15N60M2-EP Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • Very low turn-off switching losses
  • 100% avalanche tested
  • Zener-protected