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STP2NC70ZFP - N-CHANNEL MOSFET

This page provides the datasheet information for the STP2NC70ZFP, a member of the STP2NC70Z N-CHANNEL MOSFET family.

Datasheet Summary

Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 www. DataShee.

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Datasheet preview – STP2NC70ZFP

Datasheet Details

Part number STP2NC70ZFP
Manufacturer STMicroelectronics
File Size 528.06 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STP2NC70ZFP Datasheet
Additional preview pages of the STP2NC70ZFP datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 s s s s s STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 VDSS 700 700 700 700 V V V V RDS(on) < 8.5 < 8.5 < 8.5 < 8.5 Ω Ω Ω Ω ID 1.4 A 1.4 A 1.4 A 1.4 A Pw 50 W 25 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 7.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220 TO-220FP 3 2 1 3 1 IPAK DPAK DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
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