STMicroelectronics STP310N10F7
This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.| Part No. | STP310N10F7 |
|---|---|
| Datasheet | STP310N10F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP310N10F7 VDS RDS(on) max. ID 100 V 2.7 mΩ 180 A● Ultra low on-resistance
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
* 6 $0 Y Order codes STP310N10F7 Table 1. Device summary Marking Package 310N10F7 TO-220 Packaging Tube July 2013 This is information on a product in full production. DocID022287 Rev 7 1/13 Contents Contents STP310N10F7 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
