STP310N10F7
STP310N10F7 is N-channel Power MOSFET manufactured by STMicroelectronics.
N-channel 100 V, 2.3 mΩ typ., 180 A STrip FET™ VII Deep GATE™ Power MOSFET in a TO-220 package
- production data
Features
3 2 1
TO-220
Figure 1. Internal schematic diagram
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Order code STP310N10F7
VDS RDS(on) max. ID 100 V 2.7 mΩ 180 A
- Ultra low on-resistance
- 100% avalanche tested
Applications
- Switching applications
Description
This device utilizes the 7th generation of design rules of ST’s proprietary STrip FET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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Order codes STP310N10F7
Table 1. Device summary
Marking
Package
310N10F7
TO-220
Packaging Tube
July 2013
This is information on a product in full production.
Doc ID022287 Rev...
