STP360N4F6 Description
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. $0Y Order codes STI360N4F6 STP360N4F6 Table.
STP360N4F6 Key Features
- 6
- Designed for automotive