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STP4NK80Z - N-channel Power MOSFET

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatibility.

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Datasheet preview – STP4NK80Z

Datasheet Details

Part number STP4NK80Z
Manufacturer STMicroelectronics
File Size 522.36 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP4NK80Z Datasheet
Additional preview pages of the STP4NK80Z datasheet.

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Full PDF Text Transcription

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STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features Type STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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