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STP4NK80ZFP - N-channel Power MOSFET

Download the STP4NK80ZFP datasheet PDF. This datasheet also covers the STP4NK80Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • Type STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatibility.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP4NK80Z-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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STP4N40 N-Channel MOSFET ST Microelectronics
STP4N62K3 SuperMESH3 Power MOSFET ST Microelectronics
STP4NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP4NK80Z N-channel Power MOSFET
STP4NK50ZD N-channel Power MOSFET
STP4NK60Z N-CHANNEL Power MOSFET
STP4NK60ZFP N-CHANNEL Power MOSFET
STP4N150 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features Type STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.