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STP5NC70ZFP - N-CHANNEL MOSFET

Download the STP5NC70ZFP datasheet PDF. This datasheet also covers the STP5NC70Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/12 STP5NC70Z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP5NC70Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STP5NC70ZFP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP5NC70ZFP. For precise diagrams, and layout, please refer to the original PDF.

STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC70Z/FP www.DataSheet4U....

View more extracted text
ener-Protected PowerMESH™III MOSFET TYPE STP5NC70Z/FP www.DataSheet4U.com STB5NC70Z/-1 s s VDSS 700V 700V RDS(on) <2Ω <2Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D²PAK 1 2 3 TO-220 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

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