STP6NM60N Datasheet | STMicroelectronics

STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features .. Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω ID 4.6A 1 3 2 1 3 2 STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 3 2 1 - - - 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK IPAK Description This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency...