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STP75N3LLH6 - N-channel MOSFET

General Description

This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB TAB Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS RDS(on) max < 0.0055 Ω ID 3 2 1 1 3 DPAK TAB 30 V < 0.0059 Ω 75 A IPAK TAB.
  • RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 2 1 3 3 1 2 Short IPAK TO-220.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET™ VI DeepGATE™ Power MOSFET Features TAB TAB Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS RDS(on) max < 0.0055 Ω ID 3 2 1 1 3 DPAK TAB 30 V < 0.0059 Ω 75 A IPAK TAB ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 2 1 3 3 1 2 Short IPAK TO-220 Application Switching applications Figure 1. Internal schematic diagram D (TAB or 2) Description This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.