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STP70N10F4 - N-CHANNEL MOSFET

General Description

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.

Figure 1.

Key Features

  • Type STB70N10F4 STD70N10F4 STP70N10F4 STW70N10F4 VDSS 100 V 100 V 100 V 100 V RDS(on) max < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω ID 65 A 60 A 65 A 65 A.
  • Exceptional dv/dt capability.
  • Extremely low on-resistance RDS(on).
  • 100% avalanche tested.

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STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK Features Type STB70N10F4 STD70N10F4 STP70N10F4 STW70N10F4 VDSS 100 V 100 V 100 V 100 V RDS(on) max < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω ID 65 A 60 A 65 A 65 A ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100% avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. 3 2 1 TO-247 3 2 1 TO-220 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram $ ' Table 1.