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STP75N75F4 - N-CHANNEL MOSFET

General Description

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology.

The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance.

Figure 1.

Key Features

  • Type STP75N75F4 VDSS 75 V RDS(on) max < 0.011 Ω ID 78 A.
  • N-channel enhancement mode.
  • 100% avalanched rated.
  • Low gate charge.
  • Very low on-resistance.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP75N75F4 N-channel 75 V, 0.0092 Ω typ., 78 A STripFET™ DeepGATE™ Power MOSFET in a TO-220 package Datasheet — production data Features Type STP75N75F4 VDSS 75 V RDS(on) max < 0.011 Ω ID 78 A ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Table 1.