Datasheet4U Logo Datasheet4U.com

STP70NS04ZC - N-channel Power MOSFET

General Description

This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout.

Key Features

  • Type VDSS RDS(on) STP70NS04ZC Clamped < 10mΩ.
  • Low capacitance and gate charge.
  • 100% avalanche tested.
  • 175°C maximum junction temperature ID 80A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP70NF03L N-CHANNEL MOSFET ST Microelectronics
STP70L60 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop
STP7401 P-Channel Enhancement Mode MOSFET STANSON
STP7407 P-Channel Enhancement Mode MOSFET Semtron
STP75N15 N-CHANNEL MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP70N10F4 N-CHANNEL MOSFET
STP75N20 N-channel MOSFET
STP75N3LLH6 N-channel MOSFET
STP75N75F4 N-CHANNEL MOSFET
STP75NF20 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP70NS04ZC N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET Features Type VDSS RDS(on) STP70NS04ZC Clamped < 10mΩ ■ Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature ID 80A Description This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.