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STP7NM50N - N-channel Power MOSFET

General Description

This device is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.78Ω <0.78Ω <0.78Ω <0.78Ω ID 1 3 2 5A 1 3 2 IPAK 5A 5A (1) 5A TO-220 1. Limited only by maximum temperature allowed 1 3 3 1 2 ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Description This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.