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STP7NM80 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

Key Features

  • TAB Order code VDS RDS(on) max. ID ct(s) TO-220 1 23 STP7NM80 800 V 1.05 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance 6.5 A Produ D(2, TAB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in a TO-220 package Features TAB Order code VDS RDS(on) max. ID ct(s) TO-220 1 23 STP7NM80 800 V 1.05 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance 6.5 A Produ D(2, TAB) Applications • Switching applications solete G(1) t(s) - Ob S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics.