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STP80N1K1K6 - N-Channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.

Key Features

  • TAB Order code VDS RDS(on) max. ID STP80N1K1K6 800 V 1.1 mΩ 5A TO-220 1 23 D(2, TAB).
  • Worldwide best RDS(on) x area.
  • Worldwide best FOM (figure of merit).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP80N1K1K6 Datasheet N-channel 800 V, 1.0 Ω typ., 5 A MDmesh K6 Power MOSFET in a TO-220 package Features TAB Order code VDS RDS(on) max. ID STP80N1K1K6 800 V 1.1 mΩ 5A TO-220 1 23 D(2, TAB) • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications G(1) • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting S(3) Description AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.