STP80N600K6 Datasheet | STMicroelectronics

N-channel 800 V, 515 mΩ typ., 7 A MDmesh K6 Power MOSFET in a TO-220 package Features Order code RDS(on) max. 800 V 600 mΩ 7A TO-220 1 23 D(2, TAB) - Worldwide best RDS(on) x area - Worldwide best FOM (figure of merit) - Ultra low gate charge - 100% avalanche tested - Zener-protected Applications - Flyback converter G(1) - Adapters for tablets, notebook and AIO - LED lighting Description S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance...