STP80N6F6 Datasheet | STMicroelectronics

Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package - production data Features 3 2 1 TO-220 Order code STP80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package - Designed for automotive applications and AEC-Q101 qualified - Low gate charge - Very low on-resistance - High avalanche ruggedness Figure 1. Internal schematic diagram 'Ć7$% Applications - Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate - structure. The resulting Power MOSFET exhibits the lowest...