STP80N70F6
STP80N70F6 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
N-channel 68 V, 0.0063 Ω typ., 96 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 package
- production data
Features
Order code STP80N70F6
VDSS max.
68 V
RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W
(VGS= 10 V)
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge
3 2 1
TO-220
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Figure 1. Internal...
