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STP80N900K6 - N-Channel Power MOSFET

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General Description

S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.

The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

Product status link STP80N900K6 Product summary Order code STP80N900K6 Marking 80N900K6 Package TO-220 Packing Tube DS14282 - Rev 1 - April 2023 For further information contact your local STMicroelectronics sales office.

Overview

STP80N900K6 Datasheet N-channel 800 V, 750 mΩ typ., 6 A MDmesh K6 Power MOSFET in a TO-220.

Key Features

  • TAB Order code VDS RDS(on) max. ID STP80N900K6 800 V 900 mΩ 6A TO-220 1 23 D(2, TAB).
  • Worldwide best RDS(on) x area.
  • Worldwide best FOM (figure of merit).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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