STP80N900K6 Datasheet | STMicroelectronics

N-channel 800 V, 750 mΩ typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package Features Order code RDS(on) max. 800 V 900 mΩ 6A TO-220 1 23 D(2, TAB) - Worldwide best RDS(on) x area - Worldwide best FOM (figure of merit) - Ultra low gate charge - 100% avalanche tested - Zener-protected Applications - Flyback converter G(1) - Adapters for tablets, notebook and AIO - LED lighting Description S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link STP80N900K6 Product summary Order code Marking 80N900K6 Package TO-220...