STP85N15F4 Datasheet | STMicroelectronics

.. STB85N15F4 STP85N15F4 N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STrip FET™ Deep GATE™ Power MOSFET Preliminary Data Features Type STB85N15F4 STP85N15F4 - - - VDSS 150 V 150 V RDS(on) max < 0.019 Ω < 0.019 Ω ID 85 A 85 A 3 1 1 2 3 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested D²PAK TO-220 Application - Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is among the latest developments that use an advanced technology (STrip FET™ Deep GATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and mutation mode. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. $ ' 3 !-V Table 1. Device summary Marking 85N15F4 85N15F4 Package D²PAK TO-220 Packaging Tape and reel Tube Order codes STB85N15F4 STP85N15F4 January 2009 Rev...