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STP9NM50N - N-channel Power MOSFET

General Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on).

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Full PDF Text Transcription for STP9NM50N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP9NM50N. For precise diagrams, and layout, please refer to the original PDF.

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features Type STD9NM5...

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AK - DPAK Second generation MDmesh™ Power MOSFET Features Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID 3 7.5A 1 3 2 2 1 7.5A 7.5A 7.5A(1) 3 1 IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

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