STP9NM50N Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STP9NM50N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance