STP9N65M2 Datasheet | STMicroelectronics

Features Order codes STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 RDS(on) max 650 V 0.9 Ω 5A - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected Figure 1. Internal schematic diagram , TAB Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 Order codes STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 Table 1. Device summary Marking Package DPAK...