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STP9N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics.

Key Features

  • Order codes STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 VDS RDS(on) max ID 650 V 0.9 Ω 5A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram , TAB.

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Full PDF Text Transcription for STP9N65M2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP9N65M2. For precise diagrams, and layout, please refer to the original PDF.

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production da...

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in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data TAB 3 1 DPAK TAB 3 2 1 TO-220 3 2 1 TO-220FP TAB IPAK 3 2 1 Features Order codes STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 VDS RDS(on) max ID 650 V 0.9 Ω 5A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-res

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