STP9N65M2 Overview
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are therefore suitable for the most demanding high efficiency converters.
STP9N65M2 Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected