STP9NK80Z Datasheet | STMicroelectronics

Features TYPE STP9NK80Z STF9NK80Z s s Figure 1: Package ID 7.5 A 7.5 A Pw 150 W 35 W VDSS 800 V 800 V RDS(on) <1.2 Ω <1.2 Ω TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING .. REPEATIBILITY DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES s SMPS 3 1 2 TO-220 TO-220FP Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STP9NK80Z STF9NK80Z MARKING P9NK80Z F9NK80Z PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Rev. 1 May 2005 1/11 - STF9NK80Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter TO-220 Value TO-220FP Unit V V V 7.5 (- ) 4.7 (- ) 30 (- ) 35 0.28 A A A W W/°C V V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100p F, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 7.5 4.7 30 150 1.20 800 800 ± 30 4000 4.5 -55 to 150 -55 to 150 ( ) Pulse width limited by safe operating area .. (1) ISD ≤ 7.5A, di/dt ≤200A/µs, VDD = 80% V(BR)DSS (- ) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient...