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STP9N80K5 - N-channel Power MOSFET

Datasheet Summary

Description

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STP9N80K5 STW9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STP9N80K5

Datasheet Details

Part number STP9N80K5
Manufacturer STMicroelectronics
File Size 630.04 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP9N80K5 Datasheet
Additional preview pages of the STP9N80K5 datasheet.

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Full PDF Text Transcription

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STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STP9N80K5 STW9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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