STP9N80K5 Datasheet | STMicroelectronics

Features Order code STP9N80K5 STW9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STP9N80K5 STW9N80K5 Table 1: Device summary Marking Package 9N80K5 TO-220 TO-247 Packing Tube July 2016 Doc ID028461 Rev 3 This is information on a product in full production. 1/16...