STMicroelectronics STPSC1006
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC1006 |
|---|---|
| Datasheet | STPSC1006 Download |
| Manufacturer |  STMicroelectronics |
| Description | Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● Particularly suitable in PFC boost diode function
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. A K TO-220AC STPSC1006D K A NC D2PAK STPSC1006G Table 1. Device summary IF(AV) VRRM Tj (max) QC (typ) 10 A 600 V 175 °C 12 nC November 2010 Doc ID 16287 Rev 3 1/8 8 Characteristics 1 Characteristics STPSC1006 Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Repetitive peak...
