STPSC1006 Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.
STPSC1006 Key Features
- No or negligible reverse recovery
- Particularly suitable in PFC boost diode
- 55 to +175 -40 to +175
- VF (2) Forward voltage drop
- 1. tp = 10 ms, δ < 2% 2. tp = 500 µs, δ < 2%