STPSC10TH13TI
STPSC10TH13TI is Dual 650V power Schottky silicon carbide diode manufactured by STMicroelectronics.
Dual 650 V power Schottky silicon carbide diode in series
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Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Suited for specific bridge-less topologies
- High forward surge capability
- Insulated package:
- Capacitance: 7 p F
- Insulated voltage: 2500 V rms
- production data
Description
The Si C diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
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Table 1. Device summary (per diode)
Symbol
Value
IF(AV) VRRM Tj (max.)
10 A 650 V 175 °C
January 2016
This is information on a product in full production.
Doc ID024699 Rev 3
1/8
.st.
Characteristics
1 Characteristics
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per...
