STPSC16H065C
STPSC16H065C is 650V power Schottky silicon carbide diode manufactured by STMicroelectronics.
650 V power Schottky silicon carbide diode
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Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK®2 pliant ponent
- production data
Description
The Si C diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Table 1. Device summary
Symbol
Value
IF(AV) VRRM Tj (max)
2x8A 650 V 175 °C
December 2015
This is information on a product in full production.
Doc ID024810 Rev 5
1/8
.st.
Characteristics
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit...
