Datasheet Details
| Part number | STPSC16H065C |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 99.29 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet | STPSC16H065C-STMicroelectronics.pdf |
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Overview: STPSC16H065C 650 V power Schottky silicon carbide diode $ . $ $ $ .
| Part number | STPSC16H065C |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 99.29 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet | STPSC16H065C-STMicroelectronics.pdf |
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The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating.
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|---|---|
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