STMicroelectronics STPSC406
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC406 |
|---|---|
| Datasheet | STPSC406 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
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● No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K
DESCRIPTION
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. TO-220AC STPSC406D K A NC DPAK STPSC406B Table 1. Device summary IF(AV) VRRM Tj (max) QC (typ) 4A 600 V 175 °C 3 nC September 2009 Doc ID 16283 Rev 1 1/8 8 Characteristics STPSC406 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) Absolute ratings (limiting values at 25 °C unless otherwise specified) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current DPAK, Tc = 110 °C, δ = 0.5 TO-220AC, Tc = 95 °C, δ = 0.5 tp = 10 ms si...
