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STR1P2UH7 - P-CHANNEL POWER MOSFET

General Description

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance.

The device also offers ultra-low capacitances for higher switching frequency operations.

Key Features

  • Order code STR1P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 1.4 A.
  • Very low on-resistance.
  • Very low capacitance and gate charge.
  • High avalanche ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STR1P2UH7 P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET™ H7 Power MOSFET in a SOT-23 package Datasheet - production data Figure 1: Internal schematic diagram D (3) G (1) Features Order code STR1P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 1.4 A  Very low on-resistance  Very low capacitance and gate charge  High avalanche ruggedness Applications  Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations.