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STR1P2UH7 Datasheet P-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STR1P2UH7 P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET™ H7 Power MOSFET in a SOT-23 package Datasheet - production data Figure 1: Internal schematic diagram D (3) G.

General Description

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance.

The device also offers ultra-low capacitances for higher switching frequency operations.

Order code STR1P2UH7 S (2) Table 1: Device summary Marking Package 1L2U SOT-23 Packaging Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.

Key Features

  • Order code STR1P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 1.4 A.
  • Very low on-resistance.
  • Very low capacitance and gate charge.
  • High avalanche ruggedness.

STR1P2UH7 Distributor