STR1P2UH7 Description
This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure bined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Order code STR1P2UH7 S (2) Table.
STR1P2UH7 Key Features
- Very low on-resistance
- Very low capacitance and gate charge
- High avalanche ruggedness