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STR2P3LLH6 - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code V DS STR2P3LLH6 -30 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max. 56 mΩ ID -2 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STR2P3LLH6 Datasheet P-channel -30 V, 48 mΩ typ., -2 A STripFET™ H6 Power MOSFET in a SOT‑23 package 3 2 1 SOT-23 D (3) G (1) S (2) PG1D3S2 Features Order code V DS STR2P3LLH6 -30 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. 56 mΩ ID -2 A Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status STR2P3LLH6 Product summary Order code STR2P3LLH6 Marking 2K3L Package SOT-23 Packing Tape and reel DS9647 - Rev 5 - March 2019 For further information contact your local STMicroelectronics sales office. www.