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STR2N2VH5 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology.

The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

Table 1.

Key Features

  • 3 1 SOT-23 2 Order code VDS RDS(on) max ID PTOT STR2N2VH5 20 V 0.03 Ω (VGS=4.5 V) 2.3 A 0.35 W.
  • Low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STR2N2VH5 N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5 Power MOSFET in a SOT-23 package Datasheet — production data Features 3 1 SOT-23 2 Order code VDS RDS(on) max ID PTOT STR2N2VH5 20 V 0.03 Ω (VGS=4.5 V) 2.3 A 0.35 W • Low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Order code STR2N2VH5 Table 1.