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STRH8N10 Datasheet 6a N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STRH8N10 Datasheet Rad-Hard 100 V, 6 A, N-channel Power MOSFET 2 1 3 SMD.

General Description

The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure.

It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).

Qualified as per ESCC detail specification No.

Key Features

  • VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC.
  • Fast switching.
  • 100 % avalanche tested.
  • Hermetic package.
  • 50 krad TID.
  • SEE radiation hardened.

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