STRHMF16N20 Datasheet | STMicroelectronics

Rad-Hard 200 V, 16 A, N-channel Power MOSFET 2 1 SMD.5 D(3) G(1) S(2) SC3015C Product status link Internal Features VDS 200 V ID 16 A RDS(on) typ. 70 mΩ Qg 52 nC - ESCC qualified as per detail specification 5205/034 - 100 krad total ionizing dose guaranteed - Wide RBSOA under heavy-ions radiation exposure - Low RDS(on) - Low total gate charge - Fast switching Description The STRHMF16N20 is a N-channel Power MOSFET able to operate in extreme environment conditions and severe radiation exposure. It provides superior high reliability performance and high immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC...