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STS12N3LLH5 - N-channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.

The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.

Table 1.

Key Features

  • N-channel 30 V, 0.0068 Ω, 12 A, SO-8 STripFET™ V Power MOSFET Datasheet.
  • production data Type STS12N3LLH5 VDSS 30 V RDS(on) max < 0.0075 Ω ID 12 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Very low switching gate charge.
  • High avalanche ruggedness.
  • Low gate drive power losses 5 8 4 1 SO-8.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS12N3LLH5 Features N-channel 30 V, 0.0068 Ω, 12 A, SO-8 STripFET™ V Power MOSFET Datasheet — production data Type STS12N3LLH5 VDSS 30 V RDS(on) max < 0.0075 Ω ID 12 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 5 8 4 1 SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Table 1.