STS12N3LLH5 Overview
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Device summary Order code STS12N3LLH5 Marking 12D3L Package SO-8 Packaging Tape and reel June 2012 This is information on a product in full production.
STS12N3LLH5 Key Features
- production data
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
- Switching