Datasheet Summary
Features
N-channel 30 V, 0.0068 Ω, 12 A, SO-8 STripFET™ V Power MOSFET
- production data
Type STS12N3LLH5
VDSS 30 V
RDS(on) max
< 0.0075 Ω
ID 12 A (1)
1. The value is rated according Rthj-pcb
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
5 8
4 1
SO-8
Application
- Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the...