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STS14N3LLH5 - N-channel Power MOSFET

General Description

t(s)This product utilizes the 5th generation of design crules of ST’s proprietary STripFET™ technology.

Qg, in SO-8 dpackage, makes this device suitable for the most rodemanding DC-DC converter applications, where Obsolete Phigh power density is to be achieved.

Key Features

  • Type VDSS RDS(on) ID STS14N3LLH5 30 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS14N3LLH5 N-channel 30 V, 0.005 Ω, 14 A, SO-8 STripFET™ V Power MOSFET Features Type VDSS RDS(on) ID STS14N3LLH5 30 V <0.006 Ω 14 A (1) )1. The value is rated according Rthj-pcb t(s■ RDS(on) * Qg industry benchmark uc■ Extremely low on-resistance RDS(on) d■ Very low switching gate charge ro■ High avalanche ruggedness P■ Low gate drive power losses oleteApplication bs■ Switching applications - ODescription t(s)This product utilizes the 5th generation of design crules of ST’s proprietary STripFET™ technology. uThe lowest available RDS(on)*Qg, in SO-8 dpackage, makes this device suitable for the most rodemanding DC-DC converter applications, where Obsolete Phigh power density is to be achieved. SO-8 Figure 1. Internal schematic diagram Table 1.