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STS30N3LLH6 - Power MOSFET

General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power dens

Key Features

  • Type STS30N3LLH6.
  • VDSS 30 V RDS(on) max 0.0024 Ω ID 30 A RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8.

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www.DataSheet4U.com STS30N3LLH6 N-channel 30 V, 0.0016 Ω, 30 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type STS30N3LLH6 ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max 0.0024 Ω ID 30 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Table 1.