Datasheet Summary
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6 Power MOSFET in a SO-8 package
- production data
Features
8 76 5 4
SO-8
Figure 1. Internal schematic diagram
D (5,6,7,8)
Order code STN3P6F6
VDSS 60 V
RDS(on)max 0.16 Ω @ 10 V
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
ID 3A
Applications
- Switching applications
Description
This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
G (4)
S (1,2,3)
Order code STS3P6F6
Table 1. Device...