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STS3P6F6 - MOSFET

General Description

This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • 8 76 5 4 123 SO-8 Figure 1. Internal schematic diagram D (5,6,7,8) Order code STN3P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses ID 3A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6 Power MOSFET in a SO-8 package Datasheet - production data Features 8 76 5 4 123 SO-8 Figure 1. Internal schematic diagram D (5,6,7,8) Order code STN3P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses ID 3A Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G (4) S (1,2,3) Order code STS3P6F6 Table 1.