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STS5DNF60L - Dual N-CHANNEL POWER MOSFET

General Description

gate charge.

Key Features

  • Order code VDS RDS(on) max. ID 4 1 STS5DNF60L 60 V 45 mΩ 5A SO-8 D1(7, 8) D2(5, 6).
  • AEC-Q101 qualified.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge G1(2) G2(4).

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Full PDF Text Transcription (Reference)

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STS5DNF60L Datasheet Automotive-grade dual N-channel 60 V, 35 mΩ typ., 5 A STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS5DNF60L 60 V 45 mΩ 5A SO-8 D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge G1(2) G2(4) Applications • Switching applications Description S1(1) S2(3) This Power MOSFET has been developed using STMicroelectronics' unique SC12820 STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.