STS5DP3LLH6 Datasheet | STMicroelectronics

DUAL P-Channel 30 V, 0.04 Ω typ., 5 A STrip FET™ VI Deep GATE™ Power MOSFET in a SO-8 package - preliminary data Features SO-8 Figure 1. Internal schematic diagram Order code STS5DP3LLH6 VDS 30 V RDS(on) max ID 0.06 Ω at 10 V 5 A - RDS(on)- Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness - Low gate drive power losses Applications - Switching applications Description This device is a DUAL P-channel Power MOSFET developed using the 6th generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STS5DP3LLH6 Table 1. Device summary Marking Package 5K3L SO-8 Packaging Tape and reel Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed. January 2014 Doc ID025864 Rev 1 1/13 .st. Contents Contents...