Datasheet Details
| Part number | STT6N3LLH6 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 631.31 KB |
| Description | MOSFET |
| Datasheet |
 STT6N3LLH6 Datasheet
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General Description
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Table 1.
Key Features
- Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V).
- RDS(on).
- Qg industry benchmark.
- Extremely low on-resistance RDS(on).
- High avalanche ruggedness.
- Low gate drive power losses Figure 1. Internal schematic diagram.