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STU5N62K3 - N-channel MOSFET

Download the STU5N62K3 datasheet PDF. This datasheet also covers the STB5N variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.

Features

  • Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3.
  • VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. 3 1 1 3 2 D²PAK IPAK Internal schematic diagram D(2).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB5N-62K3.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STU5N60M2 N-channel Power MOSFET
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STU5N95K3 N-Channel Power MOSFET
STU5N95K5 N-channel Power MOSFET

Full PDF Text Transcription

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STB5N62K3, STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 N-channel 620 V, 1.28 Ω , 4.2 A SuperMESH3™ Power MOSFET D²PAK, DPAK,TO-220FP, TO-220 and IPAK Features Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3 ■ ■ ■ ■ ■ ■ VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1.
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