STMicroelectronics STU5N62K3
The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.FEATURES
Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3●
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● VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. 3 1 1 3 2 D²PAK IPAK Internal schematic diagram D(2) Application Switching applications
DESCRIPTION
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. Table 1. Device summary Marking Packages D²PAK DPAK TO-220FP TO-220 IPAK Doc ID 17361 Rev 2 Packaging Tape and reel Tape and reel Tube Tube Tube 1/19 19 G(1) S(3) AM01476v1 Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3 October 2010 5N62K3 Free Datasheet Contents STB/D/F/P/U5N62K3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .