Datasheet Summary
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in an IPAK package
Features
Order code
RDS(on) max.
950 V
3.5 Ω
4A
2 1
- 100% avalanche tested
- Extremely high dv/dt capability
IPAK
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
D(2, TAB)
- Zener-protected
Applications
G(1)
- Switching applications
Description
S(3)
This MDmesh K3 Power MOSFET is the result of improvements applied to
AM01476v1_tab STMicroelectronics’ MDmesh technology, bined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high...