STMicroelectronics STU5N95K3
This MDmesh K3 Power MOSFET is the result of improvements applied to AM01476v1_tab STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.| Part No. | STU5N95K3 |
|---|---|
| Datasheet | STU5N95K3 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID STU5N95K3 950 V 3.5 Ω 4A 3 2 1● 100% avalanche tested
● Extremely high dv/dt capability IPAK
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics D(2, TAB)
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) Product status link STU5N95K3 Product summary Order code STU5N95K3 Marking 5N95K3 Package IPAK Packing Tube DS14293 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. STU5N95K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
