STU5N95K5 Overview
O S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh t(s) AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications crequiring superior power density and high efficiency. STU5N95K5 Electrical ratings 1 Electrical ratings Table.
STU5N95K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected