STMicroelectronics STU5N95K5
This very high voltage N-channel Power MOSFET is designed using MDmesh t(s) AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications crequiring superior power density and high efficiency.| Part No. | STU5N95K5 |
|---|---|
| Datasheet | STU5N95K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK te Produ D(2, TAB) STU5N95K5 950 V● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
2.5 Ω 3.5 A le G(1)● Switching applications bso
DESCRIPTION
- O S(3) solete Produ Product status link Ob STU5N95K5 Product summary Order code STU5N95K5 Marking 5N95K5 Package IPAK Packing Tube DS14324 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. STU5N95K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value VGS Gate-source voltage ±30 Drain current (continuous) at TC = 25 °C 3.5 ID Drain current (continuous) at TC = 100 °C 2.2 IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C t(s) dv/dt(2) Peak diode recovery voltage slope c dv/dt(3) MOSFET dv/dt ruggedness du Tstg Storage temperature range ro TJ Operating junction temperature range P 1.
