Datasheet Summary
N-channel 950 V, 2.0 Ω typ., 3.5 A MDmesh K5 Power MOSFET in an IPAK package
Features
Order code
RDS(on) max.
) 2 t(s 1 c IPAK te Produ D(2, TAB)
950 V
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
2.5 Ω
3.5 A le G(1)
- Switching applications bso Description
- O S(3)
This very high voltage N-channel Power MOSFET is designed using MDmesh t(s) AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications...