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STU80N4F6 - N-channel Power MOSFET

General Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB IPAK 3 2 1 Figure 1. Internal schematic diagram ' Ć7$% .
  •  Order code STU80N4F6 VDS 40 V RDS(on) max ID 6.3 mΩ 80 A.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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Full PDF Text Transcription for STU80N4F6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STU80N4F6. For precise diagrams, and layout, please refer to the original PDF.

STU80N4F6 N-channel 40 V, 5.8 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a IPAK package Datasheet − production data Features TAB IPAK 3 2 1 Figure 1. Internal s...

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tasheet − production data Features TAB IPAK 3 2 1 Figure 1. Internal schematic diagram ' Ć7$% *  Order code STU80N4F6 VDS 40 V RDS(on) max ID 6.3 mΩ 80 A • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6  $0Y Order code STU80N4F6 Table 1. Device summary Marking Package 80N4F6 IPAK Packaging Tube February 2014 This is information on a

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