STMicroelectronics STU80N4F6
This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.| Part No. | STU80N4F6 |
|---|---|
| Datasheet | STU80N4F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB IPAK 3 2 1 Figure 1. Internal schematic diagram ' Ć7$% * Order code STU80N4F6 VDS 40 V RDS(on) max ID 6.3 mΩ 80 A● Low gate charge
● Very low on-resistance
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STU80N4F6 Table 1. Device summary Marking Package 80N4F6 IPAK Packaging Tube February 2014 This is information on a product in full production. DocID023839 Rev 4 1/13 13 Contents Contents STU80N4F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
