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STULED625H - N-channel Power MOSFET

General Description

These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies.

Table 1.

Key Features

  • Order codes VDS RDS(on) max ID PTOT )1 t(s2 3 TAB I²PAKFP roduc3 2 1 te PTO-220 TAB IPAK 3 2 1 oleFigure 1. Internal schematic diagram bsD(2,TAB) ct(s) - OG(1) lete ProduS(3) Obso AM01476v1 STFILED625H 25 W STPLED625H 620 V 2 Ω 6.0 A 70 W STULED625H.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected Ap.

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Full PDF Text Transcription for STULED625H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STULED625H. For precise diagrams, tables, and layout, please refer to the original PDF.

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STFILED625H, STPLED625H, STULED625H N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages Datasheet − production data Features Order codes VDS RDS(on) max ID PTOT )1 t(s2 3 TAB I²PAKFP roduc3 2 1 te PTO-220 TAB IPAK 3 2 1 oleFigure 1. Internal schematic diagram bsD(2,TAB) ct(s) - OG(1) lete ProduS(3) Obso AM01476v1 STFILED625H 25 W STPLED625H 620 V 2 Ω 6.