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STULED656 - N-channel Power MOSFET

General Description

These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies.

Table 1.

Key Features

  • TAB Order codes VDS RDS(on) max ID PTOT 3 1 DPAK t(s)TAB roduc3 2 1 te PTO-220 123 I²PAKFP TAB IPAK 3 2 1 oleFigure 1. Internal schematic diagram bsD(2,TAB) ct(s) - OG(1) lete ProduS(3) Obso AM01476v1 STDLED656 STFILED656 STPLED656 STULED656 650 V 1.3 Ω 6.0 A 70 W 25 W 70 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.

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Full PDF Text Transcription for STULED656 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STULED656. For precise diagrams, tables, and layout, please refer to the original PDF.

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STDLED656, STFILED656, STPLED656, STULED656 N-channel 650 V, 1.1 Ω typ., 6.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 DPAK t(s)TAB roduc3 2 1 te PTO-220 123 I²PAKFP TAB IPAK 3 2 1 oleFigure 1. Internal schematic diagram bsD(2,TAB) ct(s) - OG(1) lete ProduS(3) Obso AM01476v1 STDLED656 STFILED656 STPLED656 STULED656 650 V 1.3 Ω 6.