Datasheet4U Logo Datasheet4U.com

STW13009 - High Voltage Fast Switching NPN Power Transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a Hollow emitter structure to enhance switching speeds.

Figure 1.

Key Features

  • Low spread of dynamic parameters.
  • High voltage capability.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging STW13009 W13009 L W13009 H TO-247 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either groups according to production availability.