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STW26NM60-H Datasheet Power MOSFETs

Manufacturer: STMicroelectronics

General Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STW26NM60N-H N-channel 600 V, 0.135 Ω , 20 A TO-247 MDmesh™ II Power.

Key Features

  • Type STW26NM60N-H.
  • VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3.